TOSHIBA · FETs & Power MOSFETs · MPN SSM6K211FE,LF
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 10.8nC@4.5V |
| Current - Continuous Drain(Id) | 3.2A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 500mW |
| RDS(on) | 47mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 510pF |
20V 3.2A 1V 500mW 47mΩ@4.5V 1 N-channel SOT-563(SOT-666) Single FETs, MOSFETs RoHS