TOSHIBA · FETs & Power MOSFETs · MPN SSM6J808R,LF
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| Gate Charge(Qg) | 24.2nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 7A |
| Output Capacitance(Coss) | 169pF |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 136pF |
| RDS(on) | 52mΩ@4V |
| Input Capacitance(Ciss) | 1.02nF |
40V 7A 2V 3W 52mΩ@4V TSOP-6-F Single FETs, MOSFETs RoHS