TOSHIBA SSM6J512NU,LF

TOSHIBA · FETs & Power MOSFETs · MPN SSM6J512NU,LF

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Specifications

Gate Charge(Qg)19.5nC@4.5V
Drain to Source Voltage12V
Current - Continuous Drain(Id)10A
Output Capacitance(Coss)250pF
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)14.3mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.4nF
TypeP-Channel

Technical details

12V 10A 1V 1.25W 14.3mΩ@4.5V 1 P-Channel P-Channel UDFNB-6(2x2) Single FETs, MOSFETs RoHS

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