TOSHIBA · FETs & Power MOSFETs · MPN SSM6J511NU,LF
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| Gate Charge(Qg) | 47nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 570pF |
| RDS(on) | 13.5mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.35nF |
P-Channel 12V 14A 1.25W Surface Mount PDFN-6-EP(2x2)