TOSHIBA · FETs & Power MOSFETs · MPN SSM6J216FE,LF(A
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| Gate Charge(Qg) | 12.7nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 4.8A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 700mW |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 26mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.04nF |
| Type | P-Channel |
P-Channel 12V 4.8A 700mW Surface Mount ES6