TOSHIBA · FETs & Power MOSFETs · MPN SSM6J216FE,LF
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| Drain to Source Voltage | 12V |
|---|---|
| Gate Charge(Qg) | 12.7nC@4.5V |
| Current - Continuous Drain(Id) | 4.8A |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 700mW |
| RDS(on) | 32mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.04nF |
12V 4.8A 700mW 32mΩ@4.5V 1 P-Channel SOT-563(SOT-666) Single FETs, MOSFETs RoHS