TOSHIBA · FETs & Power MOSFETs · MPN SSM6J215FE(TE85L,F
No reviews yet — be the first to review TOSHIBA SSM6J215FE(TE85L,F.
| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 10.4nC@4.5V |
| Current - Continuous Drain(Id) | 3.4A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 500mW |
| RDS(on) | 59mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 630pF |
20V 3.4A 1V 500mW 59mΩ@4.5V 1 P-Channel SOT-563(SOT-666) Single FETs, MOSFETs RoHS