TOSHIBA SSM6J214FE(TE85L,F

TOSHIBA · FETs & Power MOSFETs · MPN SSM6J214FE(TE85L,F

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Specifications

Gate Charge(Qg)7.9nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)3.6A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)50mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)560pF
TypeP-Channel

Technical details

P-Channel 30V 3.6A 500mW Surface Mount SOT-563(SOT-666)

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