TOSHIBA · FETs & Power MOSFETs · MPN SSM6J212FE,LF
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| Gate Charge(Qg) | 14.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4A |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 500mW |
| RDS(on) | 40.7mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 970pF |
20V 4A 500mW 40.7mΩ@4.5V 1 P-Channel SOT-563(SOT-666) Single FETs, MOSFETs RoHS