TOSHIBA · FETs & Power MOSFETs · MPN SSM6H19NU,LF
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| Gate Charge(Qg) | 2.2nC@4.2V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1W |
| RDS(on) | 185mΩ@8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 130pF |
40V 2A 1.2V 1W 185mΩ@8V 1 N-channel UDFN-6(2x2) Single FETs, MOSFETs RoHS