TOSHIBA · FETs & Power MOSFETs · MPN SSM6G18NU,LF
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 4.6nC@4.5V |
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1W |
| RDS(on) | 112mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 270pF |
20V 2A 1V 1W 112mΩ@4.5V 1 P-Channel UDFN-6(2x2) Single FETs, MOSFETs RoHS