TOSHIBA · FETs & Power MOSFETs · MPN SSM5H90ATU,LF
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 2.2nC@4V |
| Current - Continuous Drain(Id) | 2.4A |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 500mW |
| RDS(on) | 65mΩ@4V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 200pF |
20V 2.4A 1.2V 500mW 65mΩ@4V 1 N-channel SMD-5P Single FETs, MOSFETs RoHS