TOSHIBA SSM3K59CTB,L3F

TOSHIBA · FETs & Power MOSFETs · MPN SSM3K59CTB,L3F

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Specifications

Gate Charge(Qg)1.1nC@4.2V
Drain to Source Voltage40V
Current - Continuous Drain(Id)2A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1W
RDS(on)215mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)130pF

Technical details

40V 2A 1.2V 1W 215mΩ@8V 1 N-channel SMD-3P Single FETs, MOSFETs RoHS

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