TOSHIBA SSM3K56ACT,L3F

TOSHIBA · FETs & Power MOSFETs · MPN SSM3K56ACT,L3F

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Specifications

Gate Charge(Qg)1nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)16pF
Current - Continuous Drain(Id)1.4A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)840mΩ@1.5V
Number1 N-channel
Input Capacitance(Ciss)55pF
TypeN-Channel

Technical details

N-Channel 20V 1400mA 2800mW Surface Mount SOT-883-3

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