TOSHIBA · FETs & Power MOSFETs · MPN SSM3K376R,LXHF
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| Gate Charge(Qg) | 2.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1W |
| RDS(on) | 56mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 200pF |
30V 4A 1V 1W 56mΩ@4.5V 1 N-channel SOT-23F Single FETs, MOSFETs RoHS