TOSHIBA SSM3K339R,LF

TOSHIBA · FETs & Power MOSFETs · MPN SSM3K339R,LF

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)1.1nC@4.2V
Output Capacitance(Coss)26pF
Current - Continuous Drain(Id)2A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)185mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)130pF
TypeN-Channel

Technical details

40V 2A 1.2V 1W 185mΩ@8V 1 N-channel N-Channel SOT-23F Single FETs, MOSFETs RoHS

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