TOSHIBA SSM3K123TU,LF

TOSHIBA · FETs & Power MOSFETs · MPN SSM3K123TU,LF

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Specifications

Gate Charge(Qg)13.6nC@4V
Drain to Source Voltage20V
Output Capacitance(Coss)162pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)66mΩ@1.5V
Number1 N-channel
Input Capacitance(Ciss)1.01nF

Technical details

N-Channel 20V 4.2A 800mW 2-2U1A

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