TOSHIBA · FETs & Power MOSFETs · MPN SSM3J66MFV,L3F
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 1.6nC@4.5V |
| Current - Continuous Drain(Id) | 800mA |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 150mW |
| RDS(on) | 390mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 100pF |
20V 800mA 1V 150mW 390mΩ@4.5V 1 P-Channel SOT-723 Single FETs, MOSFETs RoHS