TOSHIBA SSM3J56ACT,L3F

TOSHIBA · FETs & Power MOSFETs · MPN SSM3J56ACT,L3F

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Specifications

Gate Charge(Qg)1.6nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)16pF
Current - Continuous Drain(Id)1.4A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)4Ω@1.2V
Number1 P-Channel
Input Capacitance(Ciss)100pF
TypeP-Channel

Technical details

P-Channel 20V 1.4A 500mW Surface Mount SOT-883-3

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