TOSHIBA SSM3J35MFV,L3F

TOSHIBA · FETs & Power MOSFETs · MPN SSM3J35MFV,L3F

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)10.4pF
Current - Continuous Drain(Id)100mA
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)44Ω@1.2V
Number1 P-Channel
Input Capacitance(Ciss)44pF
TypeP-Channel

Technical details

20V 100mA 1V 150mW 44Ω@1.2V 1 P-Channel P-Channel SOT-723 Single FETs, MOSFETs RoHS

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