TOSHIBA SSM3J356R,LXHF

TOSHIBA · FETs & Power MOSFETs · MPN SSM3J356R,LXHF

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Specifications

Gate Charge(Qg)8.3nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)2A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1W
RDS(on)300mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)330pF

Technical details

60V 2A 2V 1W 300mΩ@10V 1 P-Channel SOT-23F Single FETs, MOSFETs RoHS

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