TOSHIBA SSM3J356R,LF

TOSHIBA · FETs & Power MOSFETs · MPN SSM3J356R,LF

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Specifications

Gate Charge(Qg)8.3nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1W
RDS(on)400mΩ@4V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 P-Channel
Input Capacitance(Ciss)330pF
TypeP-Channel

Technical details

P-Channel 60V 2A 1W Surface Mount SOT-23F

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