TOSHIBA · FETs & Power MOSFETs · MPN SSM3J353F,LF
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| Gate Charge(Qg) | 3.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 600mW |
| RDS(on) | 150mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 159pF |
30V 2A 2.2V 600mW 150mΩ@10V 1 P-Channel TO-236-3(SOT-23-3) Single FETs, MOSFETs RoHS