TOSHIBA · FETs & Power MOSFETs · MPN SSM3J352F,LF
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| Gate Charge(Qg) | 5.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | - |
| RDS(on) | 110mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 210pF |
20V 2A 1.2V 110mΩ@10V 1 P-Channel TO-236-3(SOT-23-3) Single FETs, MOSFETs RoHS