TOSHIBA · FETs & Power MOSFETs · MPN SSM3J168F,LF
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 3nC@10V |
| Current - Continuous Drain(Id) | 400mA |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | - |
| RDS(on) | 1.9Ω@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 82pF |
60V 400mA 2V 1.9Ω@4.5V 1 P-Channel SOT-23-3 Single FETs, MOSFETs RoHS