TOSHIBA · Transistors (BJTs) · MPN RN4987,LF(CT
No reviews yet — be the first to review TOSHIBA RN4987,LF(CT.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 80 |
| Vce Saturation(VCE(sat)) | 300mV |
| Input Resistor | 13kΩ |
| Resistor Ratio | 0.232 |
| Number | 1 NPN, 1 PNP Pre-Biased |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.8V@5mA,200mV |
| Voltage - Input(Max)(VI(off)) | 1V@100uA,5V |
| Current - Collector(Ic) | 100mA |
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 200mW Surface Mount TSSOP-6(SC-88)SOT-363