TOSHIBA RN2903,LXGF

TOSHIBA · Transistors (BJTs) · MPN RN2903,LXGF

No reviews yet — be the first to review TOSHIBA RN2903,LXGF.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain70
Emitter-Base Voltage VEBO10V
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation100mW
Voltage - Input(Max)(VI(off))1.5V@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mW Surface Mount US6

Related Transistors (BJTs)