TOSHIBA · Transistors (BJTs) · MPN RN2302,LF
No reviews yet — be the first to review TOSHIBA RN2302,LF.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 200MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 50 |
| Vce Saturation(VCE(sat)) | 300mV |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Input Resistor | 10kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 100mW |
| Voltage - Input(Max)(VI(off)) | 1.5V |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 100mW Surface Mount USM