TOSHIBA RN2106,LF(CT

TOSHIBA · Transistors (BJTs) · MPN RN2106,LF(CT

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain80
Operating Temperature-
Vce Saturation(VCE(sat))-
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor4.7kΩ
Resistor Ratio0.1
Pd - Power Dissipation100mW

Technical details

50V 80 100mA 100mW PNP 1 PNP Pre-Biased SC-75(SOT-416) Single, Pre-Biased Bipolar Transistors RoHS

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