TOSHIBA RN2105,LXHF(CT

TOSHIBA · Transistors (BJTs) · MPN RN2105,LXHF(CT

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Emitter-Base Voltage VEBO5V
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV@5mA,0.25mA
Operating Temperature-
Output Voltage(VO(on))-
Input Resistor2.2kΩ
Resistor Ratio0.0468
Pd - Power Dissipation100mW

Technical details

50V 80 100mA 100mW PNP 1 PNP Pre-Biased SC-75(SOT-416) Single, Pre-Biased Bipolar Transistors RoHS

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