TOSHIBA · Transistors (BJTs) · MPN RN1905(T5L,F,T)
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Transition frequency(fT) | 250MHz |
| DC Current Gain | 80 |
| Emitter-Base Voltage VEBO | 5V |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 300mV@5mA,0.25mA |
| Operating Temperature | - |
| Output Voltage(VO(on)) | - |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 0.0468 |
| Pd - Power Dissipation | 200mW |
50V 80 100mA 200mW 2 NPN (Pre-Biased) NPN US6 Single, Pre-Biased Bipolar Transistors RoHS