TOSHIBA RN1903,LF(CT

TOSHIBA · Transistors (BJTs) · MPN RN1903,LF(CT

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Emitter-Base Voltage VEBO10V
DC Current Gain70
Vce Saturation(VCE(sat))-
Output Voltage(VO(on))-
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))-
Input Voltage (VI(on)@Ic,Vce)2.4V@5mA,0.2V
Current - Collector(Ic)100mA

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 200mW Surface Mount TSSOP-6(SC-88)SOT-363

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