TOSHIBA RN1502(TE85L,F)

TOSHIBA · Transistors (BJTs) · MPN RN1502(TE85L,F)

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO10V
DC Current Gain50
Vce Saturation(VCE(sat))300mV@5mA,0.25mA
Output Voltage(VO(on))-
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))1.5V@0.1mA,5V
Input Voltage (VI(on)@Ic,Vce)2.4V@5mA,0.2V
Current - Collector(Ic)100mA

Technical details

50 300mW 100mA 50V 2 NPN (Pre-Biased) SC-74A(SOT-753) Bipolar Transistor Arrays, Pre-Biased RoHS

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