TOSHIBA · Transistors (BJTs) · MPN RN1426(TE85L,F)
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 300MHz |
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 90 |
| Emitter-Base Voltage VEBO | 5V |
| Vce Saturation(VCE(sat)) | 250mV |
| Current - Collector(Ic) | 800mA |
| Input Resistor | 1kΩ |
| Resistor Ratio | 10 |
| Pd - Power Dissipation | 200mW |
| Voltage - Input(Max)(VI(off)) | 800mV |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V |
Pre-Biased Bipolar Transistor (BJT) 50V 800mA Surface Mount SC-59