TOSHIBA · Transistors (BJTs) · MPN RN1401,LXHF
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| Transition frequency(fT) | 250MHz |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 30 |
| Vce Saturation(VCE(sat)) | 300mV |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 4.7kΩ |
| type | NPN |
| Resistor Ratio | 1 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 2V |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 200mW Surface Mount TO-236-3(SOT-23-3)