TOSHIBA · Transistors (BJTs) · MPN RN1106,LXHF(CT
No reviews yet — be the first to review TOSHIBA RN1106,LXHF(CT.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 80 |
| Vce Saturation(VCE(sat)) | 300mV@5mA,0.25mA |
| Operating Temperature | - |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 0.1 |
| Pd - Power Dissipation | 100mW |
50V 80 100mA 100mW 1 NPN (Pre-Biased) NPN SC-75(SOT-416) Single, Pre-Biased Bipolar Transistors RoHS