TOSHIBA · Transistors (BJTs) · MPN RN1102MFV,L3F
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 50 |
| Vce Saturation(VCE(sat)) | 300mV |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 10kΩ |
| type | NPN |
| Resistor Ratio | 1 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 150mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V |
| Voltage - Input(Max)(VI(off)) | 500mV |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-723