TOSHIBA MT3S113TU,LF

TOSHIBA · Transistors (BJTs) · MPN MT3S113TU,LF

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO5.3V
DC Current Gain200
Pd - Power Dissipation900mW
Current - Collector(Ic)100mA
Transition frequency(fT)11.2GHz
typeNPN
Number1 NPN

Technical details

5.3V 200 900mW 100mA NPN SMD-3P Bipolar RF Transistors RoHS

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