TOSHIBA · Transistors (BJTs) · MPN MT3S111P(TE12L,F)
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 8GHz |
| Collector - Emitter Voltage VCEO | 6V |
| Emitter-Base Voltage VEBO | 0.6V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 1W |
| type | NPN |
| Current - Collector(Ic) | 100mA |
6V 200 NPN 100mA TO-243AA Single Bipolar Transistors RoHS