TOSHIBA HN1C03FU-A(TE85L,F

TOSHIBA · Transistors (BJTs) · MPN HN1C03FU-A(TE85L,F

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO20V
DC Current Gain200
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO25V
Transition frequency(fT)30MHz
Vce Saturation(VCE(sat))100mV
typeNPN
Number2 NPN
Current - Collector(Ic)300mA
Operating Temperature-

Technical details

20V 200 200mW NPN 300mA TSSOP-6(SC-88)SOT-363 Bipolar Transistor Arrays RoHS

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