TOSHIBA · Transistors (BJTs) · MPN HN1C03F-B(TE85L,F)
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 350 |
| Collector - Emitter Voltage VCEO | 20V |
| Pd - Power Dissipation | 300mW |
| Emitter-Base Voltage VEBO | 25V |
| Transition frequency(fT) | 30MHz |
| Vce Saturation(VCE(sat)) | 100mV |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 300mA |
| Operating Temperature | - |
350 20V 300mW NPN 300mA SC-74(SOT-457) Bipolar Transistor Arrays RoHS