TOSHIBA · Transistors (BJTs) · MPN HN1B04FE-GR,LF
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 120 |
| Pd - Power Dissipation | 100mW |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 80MHz |
| Vce Saturation(VCE(sat)) | 100mV |
| type | NPN+PNP |
| Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 150mA |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN+PNP 50V 150mA 80MHz 100mW Surface Mount SOT-666-6