TOSHIBA 3SK293(TE85L,F)

TOSHIBA · FETs & Power MOSFETs · MPN 3SK293(TE85L,F)

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Specifications

Drain to Source Voltage12.5V
Current - Continuous Drain(Id)30mA
TypeN-Channel
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation100mW
Reverse Transfer Capacitance (Crss@Vds)0.016pF
Number1 N-channel
Input Capacitance(Ciss)2.6pF
Vgs±8V

Technical details

N-Channel 12.5V 30mA 100mW Surface Mount SC-82A

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