TOSHIBA · FETs & Power MOSFETs · MPN 2SK3878(STA1,E,S)
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 190pF |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
| Type | N-Channel |
N-Channel 900V 27A 150W Through Hole SC-65