TOSHIBA 2SK3799(STA4,Q,M)

TOSHIBA · FETs & Power MOSFETs · MPN 2SK3799(STA4,Q,M)

No reviews yet — be the first to review TOSHIBA 2SK3799(STA4,Q,M).

Specifications

Drain to Source Voltage900V
Gate Charge(Qg)60nC@10V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)190pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.2nF
TypeN-Channel

Technical details

900V 8A 4V 50W 1Ω@10V 1 N-channel N-Channel SC-67 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs