TOSHIBA · FETs & Power MOSFETs · MPN 2SK3799(STA4,Q,M)
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| Drain to Source Voltage | 900V |
|---|---|
| Gate Charge(Qg) | 60nC@10V |
| Current - Continuous Drain(Id) | 8A |
| Output Capacitance(Coss) | 190pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
| Type | N-Channel |
900V 8A 4V 50W 1Ω@10V 1 N-channel N-Channel SC-67 Single FETs, MOSFETs RoHS