TOSHIBA · FETs & Power MOSFETs · MPN 2SK3566(Q,M)
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 2.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 5.6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 470pF |
900V 2.5A 4V 40W 5.6Ω@10V 1 N-channel SC-67 Single FETs, MOSFETs RoHS