TOSHIBA 2SK3565(STA4,Q,M)

TOSHIBA · FETs & Power MOSFETs · MPN 2SK3565(STA4,Q,M)

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.15nF
TypeN-Channel

Technical details

N-Channel 900V 5A 45W Through Hole SC-67

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