TOSHIBA 2SK3564(STA4,Q,M)

TOSHIBA · FETs & Power MOSFETs · MPN 2SK3564(STA4,Q,M)

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Specifications

Drain to Source Voltage900V
Gate Charge(Qg)17nC@10V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation408W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)3.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

N-Channel 900V 0.2A 408W Through Hole TO-220SIS

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