TOSHIBA 2SK211-Y

TOSHIBA · FETs & Power MOSFETs · MPN 2SK211-Y

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage-
Output Capacitance(Coss)-
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)0.15pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)6pF
TypeN-Channel

Technical details

150mW 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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