TOSHIBA · FETs & Power MOSFETs · MPN 2SK2009(TE85L,F)
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| Drain to Source Voltage | 30V |
|---|---|
| Current - Continuous Drain(Id) | 200mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 200mW |
| RDS(on) | 2Ω@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 70pF |
| Type | N-Channel |
N-Channel 30V 200mA 200mW Surface Mount TO-236-3